Links

1. Application and improvement of the spreading resistance method for p-type 6H-SiC
   T. Gebel, D. Panknin, R. Riehn, S. Parascandola, W. Skorupa,
   Silicon Carbide and Related Materials – 1999, Materials Science Forum, Vols. 338-342, 741 (2000)
2. Microstructure and electrical properties of gate-SiO2 containing Ge-nanoclusters
   for memory applications
   H.-J. Thees, M.Wittmaack, K.-H. Stegemann, J. von Borany, K.-H. Heinig, T. Gebel,
   Microelectronics Reliability 40, 867 (2000)
3. Memory effects of ion beam synthesized Ge and Si nanoclusters in SiO2 layers
   T. Gebel, J. von Borany, W. Skorupa, W. Möller, H.-J. Thees, M. Wittmaack,
   K.-H. Stegemann, Mat. Res. Soc. Symp. Proc. 592, T6.10.1 (2000)
4. Microstructure and electrical properties of Ge- and Si-nanoclusters in implanted gate oxides for embedded memory applications
   K.-H. Stegemann, H.-J. Thees, M. Wittmaack, J.von Borany, K.-H. Heinig, T. Gebel,
   Proc. of the 18th IIT conference 2000, Alpbach, Austria, IEEE-00EX432, 32 (2000)
5. Effects of indirect ionization on the charge state distributions observed with highly
   charged ion sources
   M.P. Stockli, R. Becker, O. Delferriere, U. Lehnert, T. Gebel, F. Ullmann, N. Kobayashi,
   J. Matsumoto, Rev. Sci. Instrum. 71, 1052-1055 (2000).
6. Ion beam synthesis based formation of Ge-rich thermally grown SiO2 layers:
   a promising approach for a silicon based light emitter
   T. Gebel, L.Rebohle, J. Zhao, D. Borchert, H. Fröb, J.v. Borany, W. Skorupa,
   Mat. Res. Soc. Symp. Proc. 638, F18.1.1 (invited) (2001)
7. Flash lamp annealing of implantation doped p- and n-Type 6H-SiC
   D. Panknin, T. Gebel, W. Skorupa,
   Silicon Carbide and Related Materials – 2001, Materials Science Forum, Vols. 353-356, 587 (2001)
8. Efficient blue light emission from silicon: The first integrated Si-based optocoupler
   L. Rebohle, J. von Borany, D. Borchert, H. Fröb, T. Gebel, M. Helm, W. Möller, W. Skorupa,
   Electrochem. and Sol. St. Sc. Lett. 7, G57 (2001)
9. Non-volatile memories based on Si+ – implanted Gate oxides
   T. Gebel, J. von Borany, H.-J. Thees, M. Wittmaack, K.-H. Stegemann, W. Skorupa,
   Microelectronic Engineering 59, 247 (2001)

Ion beam processing for Si/C-rich thermally grown SiO2 layers:
photoluminescence and microstructure
L. Rebohle, T. Gebel, H. Fröb, H. Reuther, W. Skorupa,
Appl. Surf. Science 184, 156 (2001)
Flash lamp annealing with millisecond pulses for ultra shallow boron profiles in silicon
T. Gebel, M. Voelskow, W. Skorupa, G. Mannino, V. Privitera, F. Priolo, Napolitani, A. Carnera,
Nucl. Instr. Meth. B 186, 287 (2002)
Strong visible electroluminescence from Ge- and Sn-nanoclusters rich SiO2 layers
L. Rebohle, T. Gebel, J. Zhao, J.v. Borany, H. Fröb, D. Borchert, W. Skorupa,
Materials Science and Engineering C 19, 373 (2002)

13. Transient behaviour of the strong violet electroluminescence of Ge-implanted SiO2 layers
    L. Rebohle, T. Gebel, J. von Borany, W. Skorupa, M. Helm, D. Pacifici, G. Franzo, F. Priolo,
    Appl. Phys. B 74, 53 (2002)

Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers
J. Zhao, L. Rebohle, T. Gebel, J. von Borany, W. Skorupa,
Sol. St. Electronics 46, 661 (2002)

15. Memory properties of Si+ implanted gate oxides: From MOS to nv-SRAM
    J. von Borany, T. Gebel, K.-H. Stegemann, H.-J. Thees, M. Wittmaack,
    Sol. St. Electronics 46, 1729-1737 (2002)
16. Ion beam synthesized nanoclusters for silicon-based light emission
    L. Rebohle, J. von Borany, H. Fröb, T. Gebel, M. Helm, W. Skorupa,
    Nucl. Instr. Meth. B 188, 28 (2002)
17. Nanocluster-rich SiO2 layers produced by ion beam synthesis:
    electrical and optoelectronic properties
    T. Gebel
    Dissertation / PhD thesis, published in Wissenschaftlich-Technische Berichte, FZ Rossendorf FZR-350, ISSN 1437-322X (2002)
18. Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions
    T. Gebel, L. Rebohle, W. Skorupa, A.N. Nazarov, I.N. Osiyuk, V.S. Lysenko
    Appl. Phys. Lett. 81, 2575 (2002)

Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection
A.N.Nazarov, I.N.Osiyuk, V.S.Lysenko, T.Gebel, L.Rebohle , W.Skorupa,
Microelectronics Reliability 42, 1461 (2002)

20. Nanostructures in SiO2 layers: a promising approach for silicon based light emission
    T. Gebel
    Proceedings of NanoFair 2002, Strasbourg (F), L-10, Nov. 25-26 (2002)
21. Electroluminescence from thin SiO2 layers after Si- and C- coimplantation
    T. Gebel, L. Rebohle, J. Sun, W. Skorupa,
    Physica E 16/3-4, 366 – 369 (2003)
22. Correlation of charge trapping and electroluminescence
    in highly efficient Si-based light emitters
    T. Gebel, L. Rebohle, J. Sun, W. Skorupa, A.N. Nazarov, I. Osiyuk
    Physica E 16/3-4, 499 – 504 (2003)
23. Strong blue light emission from ion implanted Si/SiO2 structures
    W. Skorupa, L. Rebohle, T. Gebel, M. Helm
    in: L. Pavesi et al. (eds.), Towards the First Silicon Laser, 69-78 (2003)
24. Group-IV nanocluster formation by ion beam synthesis
    W. Skorupa, L. Rebohle, T. Gebel
    Appl. Phys. A 76, 1049 – 1059 (2003)
25. Nanocluster-based arrays of light emitters for Lab-on-a-Chip applications
    T. Gebel, L. Rebohle, R.A. Yankov, T. Trautmann, R. Müller, W. Skorupa, R. Frank, G. Gauglitz, F. Wetzel,
    VDI Berichte Nr. 1803, 113-117 (2003)

Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection
A. N. Nazarov, T. Gebel, L. Rebohle, W. Skorupa, I. N. Osiyuk, V. S. Lysenko
J. Appl. Phys. 94, 4440 (2003)

Ion Beam Processing for Silicon – Based Light Emission
W. Skorupa, T. Dekorsy, T. Gebel, M. Helm, V.S. Lysenko, A.N. Nazarov, I.N. Osiyuk, L. Rebohle, B. Schmidt, J.M. Sun, Materials Research Society Fall Meeting, 01.-05.12.2003, Boston, USA
Materials Research Society Fall Meeting, vol. 792, R 11.1.1 (2004),

28. Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping
    T. Gebel, L. Rebohle, R.A. Yankov, A.N. Nazarov, W. Skorupa,
    Microwave and Optical technology, edt. by J. Pistora, Proc. of SPIE Vol. 5445, 284-289 (2004)
29. Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing
    W. Skorupa, D. Panknin, M. Voelskow, W. Anwand, The European FLASiC Consoritum, T. Gebel, R.A. Yankov, S. Paul, W. Lerch
    Mat. Res. Soc. Symp. Proc.,.810(2004) C4.16
30. Ultra shallow junctions produced by plasma doping and flash lamp annealing
    W. Skorupa, R.A. Yankov, W. Anwand, M. Voelskow, T. Gebel, D.F. Downey, E.A. Arevalo
    Mat. Sc. Eng. B114-115., 358-361 (2004)
31. Flash lamp annealing for the formation of ultra-shallow junctions
    W. Skorupa, R.A. Yankov, T. Gebel, W. Anwand, M. Voelskow
    Advances in Electronic Manufacturing Technology, V-EMT 1:23 (Oct25, 2004), www.vertilog.com (2004)
32. Efficient ultraviolet electroluminescence form a Gd-implanted silison-metal-oxide-semiconductor device
    J.M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, T. Gebel
    Appl. Phys. Lett. 85, 3387-3389 (2004)
33. Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers
    R.A. Yankov, T. Gebel, L. Rebohle, T. Trautmann, W. Skorupa, G. Gauglitz, R. Frank, Photonic Crystal Materials and Nanostructures: Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers, SPIE vol. 5450, Bellingham, WA, USA: SPIE, 578-585 (2004)
34. Advanced thermal processing of semiconductor materials in the millisecond range
    W. Skorupa, W. Anwand, D. Panknin, M. Voelskow, R.A. Yankov, T. Gebel,
    Vacuum 78, 673-677 (2005)
35. Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications
    L. Rebohle, T. Gebel, R.A. Yankov, T. Trautmann, W. Skorupa, J. Sun, G. Gauglitz, R. Frank
    Optical Materials 27, 1055-1058 (2005)
36. Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices
    J.M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, T. Gebel
    J. Appl. Phys. 97, 123513 (2005)
37. Rare earth ion implantation for silicon based light emission: from infrared to ultraviolet
    W. Skorupa, J.M. Sun, S. Prucnal, L. Rebohle, T. Gebel, A.N. Nazarov, I.N. Osiyuk, T. Dekorsy and M. Helm
    Mater. Res. Soc. Symp. Proc. Vol. 866, V4.1.1-4.1.12 (2005)
38. The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide-semiconductor structures
    A.N. Nazarov, J.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulskii, V. Lysenko, T. Gebel, L. Rebohle, W. Skorupa, R.A. Yankov
    Mat. Sc. Eng. B, Sol. St. Mat. for Adv. Technology 124, 458-461 (2005)
39. Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing
    W. Skorupa, T. Gebel, R.A. Yankov, S. Paul, W. Lerch, D.F. Downey, E.A. Arevalo
    Journal of the Electrochem. Soc. 152 (6), G436-G440 (2005)
40. Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals
    A. Nazarov, J.M. Sun, W. Skorupa, R.A. Yankov, I.N. Osiyuk, I.P. Tjagulskii, V.S. Lysenko, T. Gebel
    Appl. Phys. Lett. 86 (15), 151914 (2005)
41. Comparative study of charge trapping in high-dose Si and Ge-implanted Al/SiO2/Si structures
    A. Nazarov, W. Skorupa, I.N. Osiyuk, I.P. Tjagulskii, V.S. Lysenko, R.A. Yankov, T. Gebel
    J. Electrochem. Soc. 152 (2), F20-F25 (2005)
42. Rare earth ion implantation for silicon based light emission
    W. Skorupa, J.M. Sun, S. Prucnal, L. Rebohle, T. Gebel, A.N. Nazarov, I.N. Osiyuk, M. Helm
    Solid State Phenomena 108-109, 755 (2005)
43. Miniaturised arrays of light-sources based on Silicon technology: A promising approach for novel sensors and Lab-on-a-Chip Systems
    T. Gebel, L. Rebohle, T. Trautmann, R.A. Yankov, W. Skorupa, G. Gauglitz, R. Frank,
    Sensor & Test 2005, 12th International Conference (10-12 May 2005), Nürnberg (Germany), Sensor 2005 Conference Proceedings Vol. 1, B1.4, 125-129 (2005)
44. Advanced thermal processing of semiconductor materials in the msec range
    W. Skorupa, R.A. Yankov, M. Voelskow, W. Anwand, D. Panknin, R.A. McMahon, M. Smith, T. Gebel, L. Rebohle, R. Fendler, W. Hentsch
    Proc. XIII. Int. Conf. Advanced Thermal Processing of Semiconductors (RTP 2005),
    Oct. 4-7, 2005, Santa Barbara, USA, IEEE Cat.No.05EX1090, ISBN 0-7803-9223-X,
    53-71 (2005)
45. Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers
    J.M. Sun, S. Prucnal, W. Skorupa, T. Dekorsy, A. Mücklich, M. Helm, L. Rebohle, T. Gebel
    J. Appl. Phys. 99, 103102 (2006)
46. Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions
    J.M. Sun, S. Prucnal, W. Skorupa, M. Helm, L. Rebohle, T. Gebel
    Appl. Phys. Lett. 89, 091908 (2006)
47. Traditional Hot-Electron MOS Devices for Novel Optoelectronic Applications
    T. Dekorsy, J.M. Sun, W. Skorupa, M. Helm, L. Rebohle, T. Gebel
    Springer Proceedings in Physics 110(2006), 265
48. Millisecond annealing with flash lamps: Tool and process challenges
    T. Gebel, L. Rebohle, R. Fendler, W. Hentsch, W. Skorupa, M. Voelskow, W. Anwand, R. A. Yankov
    Proc. XIV. Int. Conf. Advanced Thermal Processing of Semiconductors (RTP 2006, Kyoto (Japan)), 10-13 Oct. 2006, 47-55 (2006)
49. Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes
    A. Nazarov, I. Osiyuk, J. Sun, R. Yankov, W. Skorupa, I. Tyagulski, I. Lysenko, S. Prucnal, T. Gebel, L. Rebohle
    Applied Physics B 87, 129-134 (2007)
50. Millisecond processing beyond chip technology: From electronics to photonics
    W. Skorupa, W. Anwand, M. Posselt, S. Prucnal, L. Rebohle,M. Voelskow, S. Zhou, R.A. McMahon, M. Smith, T. Gebel, W. Hentsch, R. Fendler, T. Lüthge, A. Satta, T. Moe Borseth, A. Yu. Kuznetzov, B.G. Svenson
    Proc. XV. Int. Conf. Advanced Thermal Processing of Semiconductors (RTP 2007, Catania (Italy)), 02-05 Oct. 2007, in: IEEE Electron Devices Society, 1-4244-1227-7, 41-49 (2007)
51. Energy pulse modification of electronic materials: from electronics via photonics to other advanced materials
    W. Skorupa, W. Anwand, T. Gebel
    ASME International Manufacturing Science & Engineering Conference (MSEC) Symp. 22: High Power Density Surface Treatments, 04.-07.10.2009, West Lafayette, IN, USA

Proceedings of the ASME International Manufacturing Science & Engineering Conference (MSEC) Symp. 22: High Power Density Surface Treatments, New York (2009)

52. Advances in Si&Ge millisecond processing: From silicon-on-insulator to superconducting Ge
    W. Skorupa, V. Heera, T. Herrmannsdörfer, M. Posselt, D. Buca, R.A. Minamisawa, S. Mantl, W.Anwand, T. Gebel
    Proc. XVII. Int. Conf. Advanced Thermal Processing of Semiconductors (RTP 2009, Albany (NY), USA, 29 Sept – 02 Oct. 2009, ISBN 978-1-4244-3814-3, 1-10, (2009)
53. Millisecond-Annealing using flash lamps for improved performance of AZO layers
    T. Gebel, M. Neubert, R. Endler, J. Weber, M. Vinnichenko, A. Kolitsch, W. Skorupa, H. Liepack
    MRS Fall Meeting, Boston (MA), Nov. 29 – Dec. 1 2010, Materials Research Society Symposia Proceedings 1287, f10-10 (2011)
54. Overcoming challenges to the formation of high-quality polycrystalline TiO2:Ta transparent conducting films by magnetron sputtering
    M. Neubert, S. Cornelius, J. Fiedler, T. Gebel, H. Liepack, A. Kolitsch, M. Vinnichenko,Journal of Applied Physics 114, 083707 (2013)
55. Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation
    M. Voelskow, R. Endler, T. Schumann, A. Mücklich, X. Ou; H. Liepack, T. Gebel, A. Peeva, W. Skorupa, Journal of Crystal Growth 388, 70-75 (2014)
56. A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality
    D. Hiller, S. Gutsch, A.M. Hartel, P. Löper, T. Gebel, M. Zacharias,
    Journal of Applied Physics 115, 134311 (2014)
57. Modification / Crystallization of Nanolayers on Heat Sensitive Substrates (e.g. PET) by Ultrashort Thermal Annealing in the Millisecond Range
    T. Gebel, M. Neubert, H. Liepack,
    SVC 57th Annual Technical Conference Proceedings, Chicago, IL (USA), May 3- May 8, 2014, paper E-8, ISSN – 0737-5921 (2014)
58. Flash lamp annealing: (sub)millisecond thermal treatment of layers on heat sensitive substrates
    T. Gebel, M. Neubert, J. Weber, R. Endler, W. Skorupa,
    ICCG-10 Conference, Dresden June 22-June 26, 2014, paper S4-05, (2014)
59. Advanced Processing of ITO and IZO Thin Films on Flexible Glass
    M. Junghaehnel, S. Weller, T. Gebel

SID 2015 Digest, SID Display Week, San Jose; CA (USA), June 2-4, 2015, ISSN 0097-966X/15/4503-1378 (2015)